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Updated: SanDisk CFO Talks About Their Future NAND Roadmap

Published on April 11, 2013, in FAB, Future Flash.

Judy Bruner, SanDisk’s executive vice president of administration and chief financial officer talked at the Morgan-Stanley financial event late February where she provided an outline of the expected transition of memory types coming at SanDisk. and does not expect to use extreme ultraviolet (EUV) lithography for the manufacture of memories until it begins manufacturing Resistive RAM (ReRAM)

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Micron, Samsung, Hynix Agree to 3D Memory Spec

SAN JOSE, Calif. – The Micron-led Hybrid Memory Cube Consortium HMC has issued version 1.0 of its specification for a vertical memory stack with a defined logic-layer interface. Now the group will turn its focus to higher-speed variations of a dynamic random-access memory (DRAM) module stacked using through-silicon vias. In its next-generation spec, the group

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Japan’s Leading Semiconductor See Mixed Growth While Toshiba See Steady Growth

Published on March 28, 2013, in FAB, Future Flash.

Due to rising prices of NAND flash in the third quarter of 2012, Japan-based semiconductor firm Toshiba has reported fourth-quarter 2012 revenues of its semiconductor business unit grew by 10.5% on quarter, reaching JPY231.6 billion (US$2.4 billion). The firm has seen revenue growth for two consecutive quarters. Toshiba also reported fourth-quarter operating profits of JPY20

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IBM Scientists Discover New Molecular Technique to Charge Memory Chips

Published on March 21, 2013, in Future Flash.

As we are reaching the end of the geometry road for NAND Flash memory manufacturing technology, we need new materials beyond silicon to keep the power draw down in chips as their performance goes up. It may keep future circuitry extra-lean through a new technique that puts a metal oxide in silicon’s place and allows for non-volatile memory.

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EPFL Combines Graphene and Molybdenite to Create Flexible Flash Memory

Published on March 20, 2013, in Future Flash.

École polytechnique fédérale de Lausanne EPFL scientists have combined two materials with advantageous electronic properties – graphene and molybdenite – into a flash memory prototype that is promising in terms of performance, size, flexibility and energy consumption. After the molybdenite chip, we now have molybdenite flash memory, a significant step forward in the use of this

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What Facebook Really Needs From the Memory Sector

Kristin Lewotsky of EE Times post a blog after talking with Jay Parikh, Facebook’s VP of infrastructure in which he outlines Facebook’s current storage infrastructure, their growth and what they are looking for from the storage industry in order to better support their product. Facebook stores about 240 billion images, a number that is growing daily by roughly 350

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The Advantages of Next Generation Flash Memory

Published on October 28, 2012, in Future Flash.

There will be a sea change in the non-volatile memory (NVM) market over the next five years, with more dense and reliable technologies challenging dominant NAND flash memory now used in solid-state drives (SSD) and embedded in mobile products. As a result, server, storage and application vendors are now working on new specifications to optimize

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