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Samsung Takes 128-Gbit Flash Memory Below 20 nm

Published on April 17, 2013, in FAB, Press Release.

Samsung Electronics has announced it has begun volume production of a 128-Gbit, 3-bit Multi-Level Cell (MLC) NAND memory using 1x-nm class process technology. Samsung defines 1x-nm class to be somewhere between 10-nm and 19-nm. Samsung claims its chip has the highest physical density and the highest performance as it can move data at 400-Mbits per

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