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Samsung Takes 128-Gbit Flash Memory Below 20 nm

Published on April 17, 2013, in FAB, Press Release.

Samsung Electronics has announced it has begun volume production of a 128-Gbit, 3-bit Multi-Level Cell (MLC) NAND memory using 1x-nm class process technology. Samsung defines 1x-nm class to be somewhere between 10-nm and 19-nm. Samsung claims its chip has the highest physical density and the highest performance as it can move data at 400-Mbits per

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Micron, Samsung, Hynix Agree to 3D Memory Spec

SAN JOSE, Calif. – The Micron-led Hybrid Memory Cube Consortium HMC has issued version 1.0 of its specification for a vertical memory stack with a defined logic-layer interface. Now the group will turn its focus to higher-speed variations of a dynamic random-access memory (DRAM) module stacked using through-silicon vias. In its next-generation spec, the group

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NAND Flash Market Defies Trends and Grows to Record Level in 4Q12

Published on March 28, 2013, in FAB, Market Share.

Despite facing five consecutive quarters of decline and a slowdown in consumption in smartphones and tablets, the global market for NAND flash memory pulled off a surprise growth spurt during the last three months of 2012 promping sales to reach a record high, according to IHS iSuppli. NAND industry revenues came to US$5.6 billion in

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Micron’s Management Discusses Flash Memory and SSD F2Q 2013 Results

Published on March 24, 2013, in FAB.

In the second quarter Micron reported a net loss of $286 million, or $0.28 per diluted share, on net sales of $2.1 billion. These results, compared to the previous quarter’s net loss of $275 million, or $0.27 per diluted share, on net sales of $1.8 billion. Micron made a reporting change in the second quarter

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Micron Talks about its NAND Flash at the Raymond James 34th Annual Institutional Investors Conference

Published on March 20, 2013, in FAB.

The NAND space quickly starting to consolidate. There were basically four players that had the technology or still developing the technology Micron, Samsung, Hynix and a combination Toshiba and SanDisk. So over 30 years. We finally seem like we’re down to a consolidated basis where supply for the last two to three year has been

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Micron Talks About the Future of Embedded Automotive Memory

Micron held a Memory for the Interconnected World Webcast of February 21, 2013 where they talked about their Embedded Memory business and market condition in this series of articles I will cover the different Embedded market that Micron is pursuing. The main driver for the growth in Embedded Memory is the interconnected systems. The two main

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OCZ Technology Delivers Vertex 3 With 20 Nanometer Flash

Published on February 19, 2013, in SSD.

OCZ Technology unveiled today the latest version of its Vertex Solid State Drive consumer SSD dubbed 3.20. The drive uses the latest LSI SandForce 2200 controller and supports the latest MLC NAND Flash geometries from Samsung, Hynix and Micon to cut down on product cost. The Vertex 3.20 uses synchronous NAND MLC 20nm Flash optimized for 4K random writes supporting read

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Micron Launches World Smallest 20nm Dense 128-Gbit TLC NAND Flash

Published on February 19, 2013, in Press Release.

In January 2012, Toshiba finally began manufacturing its 19nm NAND Flash on 3-bit-per-cell (TLC) 128Gb chips with the world’s smallest die size at just 170mm2. The company has also been able to achieve the world’s fastest write speeds on any 3-bit-per-cell (3-bit-per-cell TLC) device at 18MB/s. Micron Technology Inc. (Boise, Idaho) has launched a year

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Hynix Overtakes Micron’s NAND Flash Market Share as Micron Hit by Manufacturing Glitch

Published on February 18, 2013, in Market Share.

The NAND Flash market in 2012 was full of turbulence, the year started with a pricing free fall and extreme over supply that seems like nothing can stop it and then Toshiba made the bold move of cutting it’s Flash production by 30 percent healing the NAND market but also losing, for the first time, it’s

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2012 End of the Year NAND Flash Market Share

Published on February 14, 2013, in Market Share.

The top three NAND markers were Samsung Electronics, who continued to lead the global NAND flash market in 2012, despite a 4.9 percent decrease in sales of Flash memory, Toshiba and Micron Technology with 38.2 percent, 27.9 percent and 13.9 percent share of the global NAND flash market in the year, respectively. Samsung’s ended up 2012 with US$7.29

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